HBN1803M65 transistor equivalent, octuple high voltage npn epitaxial planar transistor.
or systems.
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* High breakdown voltage. (BVCEO=400V)
* Low saturation voltage, typical VCE(sat) =0.12V at Ic/IB =20mA/1mA.
* Complementary to HBP1804M65
* Pb-free lead plating and halogen-free package
Equivalent Circuit
HBN1803M65
Outline
MISWB6.
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